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| HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49173. Features * 27A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) E Ordering Information PART NUMBER HGTP12N60B3D HGTG12N60B3D HGT1S12N60B3DS PACKAGE TO-220AB TO-247 TO-263AB BRAND 12N60B3D 12N60B3D 12N60B3D JEDEC TO-263AB C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60B3DS9A. G COLLECTOR (FLANGE) E Symbol C JEDEC STYLE TO-247 E C G G E COLLECTOR (BOTTOM SIDE METAL) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 600 27 12 110 20 30 96A at 600V 104 0.83 100 -55 to 150 300 260 5 10 W W/oC mJ oC oC oC UNITS V A A A V V s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 4.5 96 IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 19) TYP 1.6 1.7 4.9 7.3 51 68 26 23 150 62 304 250 22 23 280 112 500 660 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 295 175 525 800 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J ns ns ns ns J J Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 , VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 25, VGE = 15V L = 100H, VCE = 600V IC = IC110 , VCE = 0.5 BVCES IC = IC110 , VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) (c)2001 Fairchild Semiconductor Corporation td(ON)I trI td(OFF)I tfI EON EOFF td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 19) HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Electrical Specifications PARAMETER Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL VEC trr TEST CONDITIONS IEC = 12A IEC = 12A, dIEC/dt = 200A/s IEC = 1.0A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. MIN TYP 1.7 32 23 MAX 2.1 40 30 1.2 1.9 UNITS V ns ns oC/W oC/W Typical Performance Curves 30 ICE , DC COLLECTOR CURRENT (A) 25 20 15 10 5 0 Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 100 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 TJ = 150oC, RG = 25, VGE = 15V, L = 100H 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 25, L = 1mH, V CE = 480V 16 VCE = 360V, RG = 25, TJ = 125oC 14 ISC 12 10 8 6 tSC 4 2 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 100 90 80 70 60 50 40 30 15 TC 75oC 75oC 110oC 110oC 100 VGE 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W, SEE NOTES 1 2 3 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B ISC , PEAK SHORT CIRCUIT CURRENT (A) 300 tSC , SHORT CIRCUIT WITHSTAND TIME (s) HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) 70 TC = -55oC 60 50 40 30 20 10 0 TC = 25oC DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250s TC = 150oC Unless Otherwise Specified (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 180 160 140 120 100 80 60 40 20 0 0 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s TC = -55oC TC = 150oC TC = 25oC 0 2 4 6 8 10 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) RG = 25, L = 1mH, VCE = 480V 2.5 TJ = 25oC, TJ = 150oC, VGE = 10V 2.0 1.5 1.0 0.5 0 5 10 15 TJ = 25oC, TJ = 150oC, VGE = 15V 20 25 30 2.5 RG = 25, L = 1mH, VCE = 480V 2.0 1.5 TJ = 150oC; VGE = 10V OR 15V 1.0 0.5 TJ = 25oC; VGE = 10V OR 15V 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 55 RG = 25, L = 1mH, VCE = 480V tdI , TURN-ON DELAY TIME (ns) 50 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V trI , RISE TIME (ns) 150 RG = 25, L = 1mH, VCE = 480V 125 T = 25oC, T = 150oC, V J J GE = 10V 100 75 50 25 TJ = 25oC and TJ = 150oC, VGE = 15V 5 10 15 20 25 30 0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Typical Performance Curves 300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 25, L = 1mH, VCE = 480V 275 tfI , FALL TIME (ns) 250 225 200 175 150 125 100 5 10 15 20 25 30 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V Unless Otherwise Specified (Continued) 140 130 120 110 100 90 80 70 60 5 RG = 25, L = 1mH, V CE = 480V TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V OR 15V 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VCE = 10V 160 PULSE DURATION = 250s 140 120 100 80 60 40 20 0 4 5 6 7 8 9 10 11 12 TC = 25oC TC = -55oC VGE , GATE TO EMITTER VOLTAGE (V) 180 15 Ig (REF) = 1mA, RL = 25, TC = 25oC 12 VCE = 600V 9 TC = 150oC 6 VCE = 400V VCE = 200V 3 0 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 0 5 10 15 20 25 30 35 40 45 50 Qg , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM 2.5 FREQUENCY = 1MHz 2.0 C, CAPACITANCE (nF) CIES 1.5 1.0 COES 0.5 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 0.05 PD 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 DUTY FACTOR, D = t1 / t2 PEAK TJ = PD x ZJC x RJC + TC 100 101 t2 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 50 IEC , FORWARD CURRENT (A) 35 TC = 25oC, dIEC/dt = 200A/s 30 tr , RECOVERY TIMES (ns) trr 40 25oC 30 100oC 20 150oC 25 20 15 10 5 0 tb ta 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Test Circuit and Waveform HGTP12N60B3D 90% VGE L = 1mH VCE RG = 25 + 90% ICE VDD = 480V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON - FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORM Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B |
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